Method of manufacturing a semiconductor integrated circuit device

ABSTRACT

A single semiconductor chip containing a control portion and a power portion including a power element associated with the control portion and a concave portion formed between the control portion and the power portion is mounted on a die pad so as to separate the control portion and the power portion. The die pad has a convex portion which is received in the concave portion and the semiconductor chip is divided to separate the control portion and the power portion by applying pressure to the chip or by applying laser beams, and the separated semiconductor chip portions are simultaneously bonded to the die pad.

BACKGROUND OF THE INVENTION

This invention relates to methods of manufacturing semiconductorintegrated circuit (IC) devices and to lead frames used in suchmanufacturing methods and, more particularly, is directed to a method ofmanufacturing a semiconductor IC device, such as a monolithic IC, ahybrid IC or the like, and to a lead frame used in such a manufacturingmethod.

In semiconductor integrated circuit devices in which a control portionand a power portion having a power element associated with the controlportion are fabricated on a single semiconductor chip, it is known thatthe heat generated by the power portion affects the electricalcharacteristics of the control portion, interfering with the controlrelationship between the control portion and the power portion.

FIG. 3 shows a conventional IC die structure arranged to solve thatproblem. In FIG. 3, a semiconductor chip Ta having a control portion anda separate semiconductor chip Tb including a power portion are mountedin spaced relation on a die pad D of a lead frame. As a result, heatgenerated by the power portion Tb is not conducted directly to thecontrol portion Ta but is conducted to the control portion Ta onlyindirectly through the die pad D. Since the semiconductor chip Ta andthe semiconductor chip Tb are thus separated from each other and theheat generated by the power portion Tb is not conducted directly to thecontrol portion Ta as described above, the control portion Ta is notaffected by the heat generated in the power portion Tb.

In this arrangement, however, die bonding has to be carried outseparately for each of the chips Ta and Tb. Consequently, if asemiconductor IC device is made with a plurality of semiconductor chips,for example, two semiconductor chips as in the conventional example ofFIG. 3, then the die bonding step has to be carried out as many timesfor each die pad as the number of the semiconductor chips mounted on thedie pad, i.e., twice as in the conventional example of FIG. 3.Therefore, the time required for die bonding is increased and the costof die bonding is increased correspondingly.

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide amethod of manufacturing a semiconductor integrated circuit device, and alead frame therefor, which overcome the disadvantages of the prior art.

Another object of the invention is to provide a method of manufacturinga semiconductor integrated circuit device containing a plurality ofsemiconductor chips which can be manufactured using a single die bondingstep and a lead frame used in that manufacturing method.

These and other objects of the invention are attained by integrallyfabricating a semiconductor chip containing a first semiconductor chipportion and a second semiconductor chip portion which has a powerelement associated with the first semiconductor chip portion and forminga concave portion in the clip between the first and second semiconductorchip portions;

forming a convex portion having a height which is larger than a depth ofthe concave portion on a semiconductor chip mounting member on which thefirst and second semiconductor chip portions are to be mounted; and

separating the first and second semiconductor chip portions on themounting member by pressing the concave portion against the convexportion and bonding the first and second semiconductor chip portions onthe semiconductor chip mounting member at the same time.

A second method of manufacturing a semiconductor integrated circuitdevice according to the present invention includes integrallyfabricating a semiconductor chip containing a first semiconductor chipportion and a second semiconductor chip portion which has a powerelement associated with the first semiconductor chip portion and forminga concave portion in the chip between the first and second semiconductorchip portions;

forming a convex portion which is to be fixed to the concave portion inthe chip on a semiconductor chip mounting member on which the first andsecond semiconductor chip portions are mounted; and

bonding the first and second semiconductor chip portions to thesemiconductor chip mounting portion so that the convex mounting memberportion is received in the concave chip portion and separating the firstand second semiconductor chip portions by laser beams.

A lead frame for mounting a semiconductor chip containing a firstsemiconductor chip portion and a second semiconductor chip portionhaving a power element associated with the first semiconductor chipportion which are fabricated integrally and having a concave portionformed between the first and second semiconductor chip portions includesa convex portion to be received in the concave chip between the firstand second semiconductor chip portions.

In the first method of manufacturing a semiconductor integrated circuitdevice, only the convex mounting member portion and the concave chipportion are initially in contact with each other since the height of theconvex portion of the mounting member is greater than the depth of theconcave portion formed between the first and second semiconductor chipportions. Then, when the first and second semiconductor chip portionsare separated from each other by pressing the chip against the mountingmember, the first and second semiconductor chip portions are bonded tothe mounting member on opposite sides of the convex portion. As aresult, the two semiconductor chip portions are separately mounted onthe semiconductor chip mounting member by die bonding.

According to the second method of manufacturing a semiconductorintegrated circuit device, the first and second semiconductor chipportions are mounted on the semiconductor chip mounting member with theconvex portion of the mounting member received in the concave chipportion between the first and second semiconductor chip portions. Then,when the first and second semiconductor chip portions are separatedalong the convex mounting member portion and the concave chip portion bylaser beams, a space is cut in the concave portion between the first andsecond semiconductor chip portions with the result that the twosemiconductor chips are separately affixed to the-semiconductor chipmounting member by die bonding.

Because of the arrangement of the lead frame as described above, whenthe convex portion of the lead frame is received in the concave portionof the semiconductor chip which is located between the first and secondsemiconductor chip portions, the semiconductor chip portions can bemounted on the lead frame with high accuracy of alignment.

BRIEF DESCRIPTION OF THE DRAWINGS

Further objects and advantages of the invention will be apparent from areading of the following description in conjunction with theaccompanying drawings, in which:

FIGS. 1(a) and 1(b) are perspective views showing a first representativeembodiment of a die bonding process according the present invention;

FIGS. 2(a)-2(c) are perspective views showing a second representativeembodiment of a die bonding process according to the present invention;and

FIG. 3 is a perspective view showing a lead frame having integratedcircuit components according to a conventional arrangement.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Typical methods of manufacturing a semiconductor integrated circuitdevice and a lead frame therefor according to the present invention aredescribed hereinafter with reference to the drawings. Elements and partscorresponding to those of the conventional example described above withreference to FIG. 3 are marked with the same reference characters andwill not be described in detail.

In the first representative embodiment of the invention shown in FIGS.1(a) and 1(b), a control portion T1 and a power portion T2 which has apower element associated with the control portion T1 are integrallyfabricated on a single semiconductor chip T by conventional techniquesincluding impurity diffusion and the like. In the chip T, the controlportion T1 and the power portion T2 are electrically isolated from eachother and are made in hybrid form on the surface of the singlesemiconductor chip in such a way that they are electrically independent.The semiconductor chip T has a concave groove C1 formed in its lowersurface between the control portion T1 and the power portion T2.

In addition, a die pad D1 for a lead frame is provided for mounting thesemiconductor chip T. The die pad D1 includes a convex portion C2extending in a straight line and having a height which is greater thanthe depth of the concave portion C1. Because the height of the convexportion C2 is greater than the depth of the concave portion C1, whenthese two components are moved together only the concave portion C1 andthe convex portion C2 can come into contact with each other and thelower surface of the semiconductor chip T does not engage the uppersurface of the die pad D1. Thus, when the convex portion C2 is receivedin the concave portion C1 between the control portion T1 and the powerportion T2 during the chip mounting step, the semiconductor chip T canbe attached to the die pad D1 with high accuracy of alignment.

To mount the semiconductor chip portions on the die pad D1, a diebonding adhesive is coated on the die pad and the concave portion C1 andthe convex portion C2 are brought in contact with each other. With theconcave portion C1 and the convex portion C2 in contact with each other,the semiconductor chip T is pressed downwardly toward the die pad D1 asshown by the arrows m1 and m2 in FIG. 1(a), so that pressure is appliedby the convex portion C2 to the concave portion C1. As a result, thesemiconductor chip T is split along the concave portion C1 and the twoparts are pressed against the die pad on opposite sides of the convexportion C2, being separated by the inverted V-shaped sides of the convexportion C2. Consequently, the semiconductor chip T is divided to providethe semiconductor chip portion TA having the control portion T1 which isseparated from the semiconductor chip portion TB containing the powerportion T2 as shown in FIG. 1(b).

The semiconductor chip portion TA and the semiconductor chip portion TB,that are produced when the semiconductor chip T is divided, movedownwardly along the opposite side surfaces of the convex portion C2 asa result of the above-mentioned pressure and are spaced from each otheron opposite sides of the convex portion C2, and thus bonded to the diepad D1 as shown in FIG. 1(b). As a result, the two semiconductor chipsTA and TB are separately attached by die bonding to the die pad D1 witha space between them.

The convex portion C2 is preferably narrow so as to enable the separateedges of the semiconductor chip portions TA and TB to move smoothlyalong the side surfaces of the convex portion C2 during the pressingstep in which the semiconductor chip T is divided into the semiconductorchips TA and TB and the two semiconductor chips TA and TB are thenattached to the die pad by die bonding. Moreover, while the concaveportion C1 is shaped as a groove and the convex portion C2 is shaped asa straight line and fits into the convex portion C1 as described above,if the convex portion C2 is made longer than the concave portion C1 anda plurality of chips with concave portions are positioned in a straightline on the convex portion, it is possible to similarly attach aplurality of semiconductor chips to the die pad D1 by die bonding.

FIGS. 2(a)-2(c) show a die bonding process used in a manufacturingmethod according to the second representative embodiment of the presentinvention. As shown in FIG. 2(a), the semiconductor chip T used in thesecond embodiment is the same as that of the first embodiment. A die padD2 of a lead-frame for mounting the semiconductor chip T is the same instructure as the die pad D1 of the first embodiment except for the shapeof a convex portion C3. This convex portion C3 has the same shape as andfits into the concave portion C1 of the semiconductor chip T.

While the convex portion C3 fits completely and closely into the concaveportion C1, the height and width of the convex portion C3 are preferablyselected to be very slightly smaller than those of the concave portionC1 so that the convex portion C3 can fit easily into the concave portionC1. When the concave portion C1 and the convex portion C3 are in contactwith each other so that the convex portion C3 is received in the concaveportion C1 between the control portion T1 and the power portion T2, thesemiconductor chip T can be attached to the die pad D1 with highalignment accuracy. The function of the convex portion C3 according tothe second embodiment is only to provide this alignment so as toaccurately position the semiconductor chip T on the die pad D1 which isdifferent from the function of the convex portion C2 according to thefirst embodiment.

As shown in FIG. 2(b), the semiconductor chip T is mounted on and bondedto the die pad D2, to which a die bonding adhesive has been applied, insuch a way that the convex portion C3 is received in the concave portionC1. Then, a laser cutter apparatus (not shown) is used to direct laserbeams LB on the fixed upper surface of the concave portion C1 in whichthe convex portion C3 is received. As a result, the chip portions thatare impinged by the laser beams LB disintegrate to form a space Sbetween the semiconductor chip portions TA and TB above the convexportion C3 so that the semiconductor chip T is divided. This separatesthe chip portion TA in which the power portion T1 is fabricated from thesemiconductor chip portion TB in which the control portion T2 isfabricated as shown in FIG. 2(c). Consequently, the two semiconductorchips TA and TB are separately attached to the die pad D2 by diebonding.

If the depth of the concave portion C1 is reduced, a deeper cut must bemade in the semiconductor chip T by the laser beams, which necessarilyrequires a high intensity laser output. Accordingly, if the size andshape of the concave portion C1 are selected properly, it is possible toreduce the laser cutting time and to increase the efficiency of thelaser radiation.

According to the first and second embodiments of the present inventionas described above, it is possible to provide a bonded die structurecontaining a plurality of semiconductor chips by a single die bondingand the cost and time required for the die bonding are reduced ascompared with the Conventional example having two semiconductor chips asshown in FIG. 3. In addition, it is possible to obtain the advantage ofthe two-chip die bonded structure shown in FIG. 3 in which the controlportion-Ta is not affected by heat generated from the power portion Tb.This is accomplished by dividing the semiconductor chip portion TAhaving the control portion T1 from the semiconductor chip portion TBhaving the power portion T2 by splitting the convex portion C2 or by theradiation of laser beams LB. Then the heat generated by the powerportion T2 does not affect the electrical characteristic of the controlportion T1 so as interfere with the combined operational characteristicof the control portion T1 and the power portion T2. The manufacturingmethods according to the present invention can also be applied to themanufacture of a semiconductor integrated circuit device, such as a highfrequency IC or the like, having a plurality of semiconductor chips withdifferent functions that to prevent a control portion from beingaffected not only by heat generated from a power portion but also froman electrical standpoint.

Since one semiconductor chip T is divided to provide only one controlportion T1 and one power portion T2 according to the above describedembodiment of the invention, only one concave portion C1 and one convexportion C2 or C3 are provided. The number of pairs of such portions,however, is not limited to one and may be two or greater. Specifically,the number of separated semiconductor chip portions produced inaccordance with the connection is not limited to two. If a plurality ofconcave portions C1 are formed in a semiconductor chip in which aplurality of control portions T1 and a plurality of power portions T2are formed in a hybrid manner, and corresponding convex portions areformed on the die pad, then it is possible to divide a singlesemiconductor chip into a large number of semiconductor chips.

Although the semiconductor chip portions are attached to the die pad ofthe lead frame by die bonding in order to improve the electricalcharacteristics of a monolithic IC having a single function by isolatingthe two semiconductor chips so that one semiconductor chip portion canbe protected from heat generated by the other semiconductor chip portionaccording to the described embodiments of the invention, when thepresent invention is applied to the manufacture of a hybrid IC, it ispossible to use a substrate on which a number of convex portions C2 orC3 are fabricated in the semiconductor chip mounting member.

While the convex portions C2 and C3 are formed by pressing a flat-shapeddie pad from the rear surface as described above, the present inventionis not limited thereto and the convex portions C2 and C3 may also beformed, for example, by molding when the die pad is formed. Also, whilethe rear surfaces of the convex portions C2 and C3 are concave asdescribed above, the present invention is not limited thereto and therear surfaces of the convex portion C2 and C3 may have a planar shape.

As described above, in the method of manufacturing the semiconductorintegrated circuit device according to the first embodiment, since theheight of the convex portion formed on the semiconductor chip mountingmember is greater than the depth of the concave portion formed betweenthe first and second semiconductor chip portions, the first and secondsemiconductor chip portions are divided by pressing the chip against theconvex portion and the first and second semiconductor chip portions aresimultaneously bonded to the semiconductor chip mounting member. Thus,it is possible to manufacture semiconductor integrated circuit deviceshaving a plurality of semiconductor chips by using a single die bondingstep.

In the method of manufacturing the semiconductor integrated circuitdevice according to the second embodiment, since the first and secondsemiconductor chip portions are simultaneously bonded to thesemiconductor chip mounting member so that the convex portion formed onthe semiconductor chip mounting portion is received in the concaveportion defined between the first and second semiconductor chipportions, and laser beams are applied to the combined convex and concaveportions to divide the first and second semiconductor chip portions, itis possible to manufacture a semiconductor integrated circuit devicehaving a plurality of semiconductor chips using a single die bondingstep.

Because the semiconductor integrated circuit device having a pluralityof semiconductor chips can be manufactured using one die bonding step asdescribed above, the time required for die bonding can be reduced andthe cost of the die bonding operation can be reduced accordingly. Inaddition, it is possible to provide the advantages of the conventionaltwo-chip die bonded structure in which the control portion is notaffected by heat generated by the power portion. This is accomplished byseparating the semiconductor chip portion having the control portionfrom the semiconductor chip portion having the power portion by usingthe convex die pad portion or by laser beam radiation. This prevents theheat generated by the power portion from affecting the electricalcharacteristics of the control portion and interfering with the combinedoperational relation of the control portion and the power portion.

In the lead frame according to the present invention, since the convexportion which is interposed between the first and second semiconductorchip portions is received in the concave portion of the semiconductorchip to control positioning and separation of the chip portions, it ispossible to manufacture a semiconductor integrated circuit device havinga plurality of semiconductor chips using a single die bonding step.

Although the invention has been described herein with reference tospecific embodiments, many modifications and variations therein willreadily occur to those skilled in the art. Accordingly, all suchvariations and modifications are included within the intended scope ofthe invention.

What is claimed is:
 1. A method of manufacturing a semiconductorintegrated circuit device comprising the steps of integrally forming asemiconductor chip containing a first semiconductor chip portion and asecond semiconductor chip portion having a power element which isassociated with the first semiconductor chip portion and forming aconcave portion between the first and second semiconductor chipportions;forming a convex portion having a height which is greater thana depth of the concave portion on a semiconductor chip mounting memberon which the first and second semiconductor chip portions are to bemounted; and dividing the first and second semiconductor chip portionsby pressing the concave portion against the convex portion and bondingthe first and second semiconductor chip portions on the semiconductorchip mounting member to effect die bonding.
 2. A method of manufacturinga semiconductor integrated circuit device comprising the steps ofintegrally forming a semiconductor chip containing a first semiconductorchip portion and a second semiconductor chip portion having a powerelement which is associated with the first semiconductor chip portionand forming a concave portion between the first and second semiconductorchip portions;forming a convex portion having a shape which is similarto the shape of the concave portion on a semiconductor chip mountingmember on which said first and second semiconductor chip portions are tobe mounted; and bonding said first and second semiconductor chipportions on the semiconductor chip mounting member so that said convexmounting member portion is received in the concave chip portion andimpinging laser beams on the concave chip portion to separate the firstand second semiconductor chip portions and effect die bonding.
 3. Amethod of manufacturing a semiconductor integrated circuit devicecomprising the steps of integrally forming a semiconductor chipcontaining first semiconductor chip portions and second semiconductorchip portions having power elements which are associated with the firstsemiconductor chip portions and forming a plural of concave portionsbetween the first and second semiconductor chip portions;forming aplural of convex portions having height which are greater than depth ofthe concave portions on semiconductor chip mounting members on which thefirst and second semiconductor chip portions are to be mounted; anddividing the first and second semiconductor chip portions by pressingthe concave portions against the convex portions and bonding the firstand second semiconductor chip portions on the semiconductor chipmounting members to effect die bonding.
 4. A method of manufacturing asemiconductor integrated circuit device comprising the steps ofintegrally forming a semiconductor chip containing first semiconductorchip portions and second semiconductor chip portions having powerelements which are associated with the first semiconductor chip portionsand forming a plural of concave portions between the first and secondsemiconductor chip portions;forming a plural of convex portions havingshape which are similar to the shape of the concave portions onsemiconductor chip mounting members on which said first and secondsemiconductor chip portions are to be mounted; and bonding said firstand second semiconductor chip portions on the semiconductor chipmounting members so that said convex mounting member portions arereceived in the concave chip portion and impinging laser beams on theconcave chip portion to separate the first and second semiconductor chipportions and effect die bonding.